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Silicon Wafer
Ingot

Company_002


 


 

 Specifications

Crystal/Ingot

Crystal Growth Technique

 

CZ

Diameter

mm

76/ 100/ 125/ 150

Orientation

 

100/ 111

Orientation Tolerance

degree

±2

Dopant

Phosphorous/Antimony/Boron

Oxygen Concentration

atoms/cm3

≦20 x 1017

Carbon Concentration

atoms/cm3

≦10 x 1016

◎Phosphorous / Boron

Resistivity Range

Ohm-cm

0.003~1

1~30

30

Radial Resistivity Variation

%

20

25

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◎Antimony

Resistivity Range

Ohm-cm

0.008

Radial Resistivity Variation

%

20

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