| 1975 | Technical cooperation with SIEMENS. |
| 1980 | Started silicon single crystal production by FZ method. |
| 1981 | Established semiconductor plant. Started production of 1.7" and 2" wafers. |
| 1984 | Started production of 2.5" wafers. |
| 1986 | Started production of silicon single crystal by CZ method. |
| 1987 | Technical cooperation with Japanese companies. |
| 1988 | Started production of 3" and 4" wafers. |
| 1995 | Established San Chih Semiconductor Co., Ltd. The paid-in capital NT$400,000,000. |
| 1997 | Started production of 5" ingots. |
| 1998 | Established 8” reclaimed wafer plant in Kuanyin. |
| 2000 | Certified as a QS 9000 Company. |
| 2003 | Jan. Apply for cash capital increase NT$450,000,000. The paid-in capital after increased became NT$850,000,000.
Jun. Established subsidiary company Green Energy Technology Inc. which is produce wafers and ingots for solar usage.
Aug. Apply for cash capital increase NT$250,000,000. The paid-in capital after increased became NT$1,100,000,000.
Nov. Apply for cash capital increase NT$400,000,000. The paid-in capital after increased became NT$1,500,000,000. |
| 2004 | Jan. Apply for cash capital increase NT$400,000,000. The paid-in capital after increased became NT$1,900,000,000.
Mar. Apply for cash capital increase NT$200,000,000. The paid-in capital after increased became NT$2,100,000,000. |
| 2005 | Apr. Apply for cash capital increase NT$150,000,000. The paid-in capital after increased became NT$2,250,000,000. |
| 2006 | Mar. 8"reclaimed wafer plant in Kuanyin closed.
Sep. Apply for capital reduction NT$1,750,000,000. The paid-in capital after reduced became NT$500,000,000 |
| 2007 | Mar. Awarded by Taiwan Industrial Technology Association "Golden Root Award"
Jun. Transfer surplus NT$200,000,000 to capital increase. The paid-in capital after increased became NT$700,000,000.
Sep. Securities and Future Bureau approval public offering
Oct. Log in Emerging Stock Listing. |
| 2008 | Aug. Transfer surplus NT$70,000,000 to capital increase & transfer employee bonus NT$3,000,000 to capital increase.
The paid-in capital after increased became NT$773,000,000.
Nov. Taoyuan Tayuan plant opened. |
| 2009 | Aug. Transfer surplus NT$77,240,000 to capital increase.
The paid-in capital after increased became NT$850,240,000. |
| 2010 | Oct. LED sapphire crystal growth was officially mass-produced.
Oct. it issued the first domestic unsecured conversion corporate bonds in 1999. |
| 2011 | Shortlisted in 2011 "Taiwan Top 100 Technology".
Jun. An audit committee was established.
Dec. The salary committee was established. |
| 2012 | Aug. Sapphire Crystal Growth Factory passed ISO9001:2008 certification. |
| 2013 | Developed 5" low oxygen concentration silicon wafer.
4 "Sapphire ingot mass production. |
| 2014 | Apr. the "Taiwan Industrial Science and Technology Promotion Association" awarded the Golden Root Award. |
| 2015 | Developed 4 "160um ultra-thin wafer. |
| 2016 | Developed 6" low oxygen concentration silicon wafer. |
| 2017 | Developed 4" lightly polished wafers. |
| 2018 | Developed 5" high resistance uniformity silicon wafer. |
| 2019 | Jun. the stock listing was terminated. |
| 2020 | Mar. The public offering was cancelled.
May. Capital reduction and capital increase were processed. After capital reduction and capital increase, the capital amount was NT$95,800,000.
Developed 4" ultra-high resistance silicon wafer. |